In this work, we study analytical model such threshold voltage (VTH) and Subthreshold swing (SS) for a new
Surrounding Gate MOSFET. This new SG-MOSFET is composed of Dual-metal Gate (DMG) M1 and M2
with different work function, Graded Channel (GC) whose the doping is higher near the source side than
the drain side and Dual Oxide Thickness (DOT). Analytical model for VTH and SS are developed by solving
2D Poisson equation using parabolic approximation method. Results for new device are compared to those
obtained by numerical simulation and have been found to be in good agreement. Comparative study
between (DMG-GC-DOT) SG MOSFET and with different device engineering shows that the new structure
provides improved electron transport and reduced short channel effects (SCE)